D476A datasheet, D476A pdf, D476A data sheet, datasheet, data sheet, pdf The 2SD476A transistor might have a current gain anywhere between 60 and 200. The gain of the 2SD476A-B will be in the range from 60 to 120, 2SD476A-C ranges from 100 to 200. Symbol V DS V GS I DM I AR E AR T J, T STG Symbol Typ Max 17.4 30 45 60 RθJC 1.2 3 W Power Dissipation T A=70°C 1.3 A T A=25°C P DSM 2 Repetitive avalanche energy L=0.3mH C 135 A mJ Junction and Storage Temperature Range

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Symbol V DS V GS I DM I AR E AR T J, T STG Symbol Typ Max 17.4 30 45 60 RθJC 1.2 3 W Power Dissipation T A=70°C 1.3 A T A=25°C P DSM 2 Repetitive avalanche energy L=0.3mH C 135 A mJ Junction and Storage Temperature Range Aug 08, 2016 · D1047 Datasheet - Vcbo=160V, NPN Transistor - Sanyo, 2SD1047 datasheet, D1047 pdf, D1047 pinout, D1047 manual, D1047 schematic, D1047 equivalent. The INA188 is specified over the temperature range of –40°C to +125°C . Device Information. ORDER NUMBER PACKAGE BODY SIZE. INA188 SOIC (8) 4.90 mm × 3.91 mm INA188 WSON (8)(2) 4.00 mm × 4.00 mm (1) For all available packages, see the orderable addendum at the end of the data sheet.

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The INA188 is specified over the temperature range of –40°C to +125°C . Device Information. ORDER NUMBER PACKAGE BODY SIZE. INA188 SOIC (8) 4.90 mm × 3.91 mm INA188 WSON (8)(2) 4.00 mm × 4.00 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Notice MOSPEC reserves the rights to make changes of the content herein the document anytime without notification. MOSPEC or anyone on its behalf, assumes no responsibility or liability for any errors or Symbol V DS V GS I DM I AR E AR T J, T STG Symbol Typ Max 17.4 30 45 60 RθJC 1.2 3 W Power Dissipation T A=70°C 1.3 A T A=25°C P DSM 2 Repetitive avalanche energy L=0.3mH C 135 A mJ Junction and Storage Temperature Range General Description Product Summary [email protected]℃ I D (at V GS=10V) 14A R DS(ON) (at V GS=10V) <0.28Ω 100% UIS Tested! 100% R g Tested! Symbol V DS V GS I DM I AR E AR E AS Peak diode recovery dv/dt dv/dt T J, T STG T L Symbol RθJA RθCS RθJC Maximum Junction-to-Ambient A,G T C=25°C-55 Maximum Thermal Characteristics Units 45 °C/W Parameter ... Single N -Channel, Logic Level, PowerTrench TM MOSFET General Description Features Absolute Maximum Ratings T A = 25 o C unless otherwise noted Symbol Parameter F DS6612 A Units V DSS Drain-Source Voltage 30 V V GSS Gate-Source Voltage ± 20 V ID Drain Current - Continuous (Note 1a) 8.4 A