COMPLEMENTARY SILICON HIGH POWER TRANSISTORS STMicroelectronic PREFERRED SALESTYPES DESCRIPTION The TIP35C is a silicon Epitaxial-Base NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and switching applications. The complementary PNP type is TIP36C. Jun 26, 2017 · IRG71C28U Datasheet PDF, IRG71C28U datasheet, IRG71C28U pdf, IRG71C28U pinout, IRG71C28U data, circuit, IRG71C28U equivalnet, IRG71C28U replacement. DTC123Y series Datasheet lElectrical characteristic curves (Ta =25°C) Fig.1 Input voltage vs. output current (ON characteristics) Fig.2 Output current vs. input voltage (OFF characteristics) Fig.3 Output current vs. output voltage Fig.4 DC current gain vs. output current T588N12TOC, T588N12TOF, T588N14 datasheet.Selling leads from all over the world, Seekic is the world's biggest IC trading marketplace on the internet. We offer finest suppliers for T588N12TOC, T588N12TOF, T588N14 you can also download the datasheet for T588N12TOC, T588N12TOF, T588N14. 2A QUAD DARLINGTON SWITCH SUSTAINING VOLTAGE: 70 V 2 A OUTPUT HIGH CURRENT GAIN IDEAL FOR DRIVING SOLENOIDS, DC MOTORS, STEPPER MOTORS, RELAYS, DISPLAYS, ETC. DESCRIPTION The L702 is a monolithic integrated circuit for high current and high voltage switching applications. It comprises four darlington transistors with common SCLS087E − DECEMBER 1982 − REVISED AUGUST 2003 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 switching characteristics over recommended operating free-air temperature range, CL = 50 pF

March 2014 FQP12N60C — N-Channe l QFET ® MOSFET ©2003 Fairchild Semiconductor Corporation FQP12N60C Rev C0 1 www.fairchildsemi.com FQP12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. C78N12 Datasheet, C78N12 PDF, C78N12 Data sheet, C78N12 manual, C78N12 pdf, C78N12, datenblatt, Electronics C78N12, alldatasheet, free, datasheet, Datasheets, data ... NTD60N02R Power MOSFET 62 A, 25 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Minimize Conduction Loss • Low Ciss to Minimize Driver Loss • Low Gate Charge • Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters • Pb−Free Packages are Available 1997 Dec 16 5 Philips Semiconductors Product specification 2-input OR gate 74HC1G32 74HCT1G32 DC CHARACTERISTICS FOR THE 74HC1G Over recommended operating conditions. COMPLEMENTARY SILICON HIGH POWER TRANSISTORS STMicroelectronic PREFERRED SALESTYPES DESCRIPTION The TIP35C is a silicon Epitaxial-Base NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and switching applications. The complementary PNP type is TIP36C.

C78N12 datasheet, C78N12 pdf, C78N12 data sheet, datasheet, data sheet, pdf NPN TRIPLE DIFFUSED 2SD200 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) TO-3! High Collector-Base Voltage(VCBO=1500V)! High Speed Switching ABSOLUTE MAXIMUM RATINGS (TA=25℃℃℃℃) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) T588N12TOC, T588N12TOF, T588N14 datasheet.Selling leads from all over the world, Seekic is the world's biggest IC trading marketplace on the internet. We offer finest suppliers for T588N12TOC, T588N12TOF, T588N14 you can also download the datasheet for T588N12TOC, T588N12TOF, T588N14. The TPS51610 is a fully Intel-compliant single-phase synchronous buck controller with integrated gate drivers designed for use in low-power CPUs and Intel integrated Graphics solutions for IMVP-6+ generation notebook systems. T588N14TOF from Infineon Technologies AG. Find the PDF Datasheet, Specifications and Distributor Information. OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous ... Jun 26, 2017 · IRG71C28U Datasheet PDF, IRG71C28U datasheet, IRG71C28U pdf, IRG71C28U pinout, IRG71C28U data, circuit, IRG71C28U equivalnet, IRG71C28U replacement.

1997 Dec 16 5 Philips Semiconductors Product specification 2-input OR gate 74HC1G32 74HCT1G32 DC CHARACTERISTICS FOR THE 74HC1G Over recommended operating conditions. N-Channel 75 V MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for N-Channel 75 V MOSFET. stp20n10l datasheet (pdf) 1.1. stp20n10l.pdf size:379k _st. stp20n10l stp20n10lfi n - channel enhancement mode low threshold power mos transistor type vdss rds(on) id stp20n10l 100 v 0.12 ? 20 a stp20n10lfi 100 v 0.12 ? 12 a typical r = 0.09 ? ds(on) avalanche rugged technology 100% avalanche tested repetitive avalanche data at 100oc 3 3 low ... C78N12 datasheet, C78N12 pdf, C78N12 data sheet, datasheet, data sheet, pdf

OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous ... N-Channel 75 V MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for N-Channel 75 V MOSFET.

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DE375-102N12A RF Power MOSFET 102N12A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms L G, L S and L D. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, C OSS, and Silicon Diffused Power Transistor BU2532AL DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. 1N5060TR Vishay Semiconductors Rectifiers 2.0 Amp 400 Volt 50 Amp IFSM datasheet, inventory, & pricing. TC-5910C has two RF ports and two EMI filtered data ports. With RF coupling accessories and filtered control ports, the TC- 5910C makes an ideal solution for testing mobiles, Bluetooth and small RF devices on the test benches of manufacturing, R&D, service, and QC. UNISONIC TECHNOLOGIES CO., LTD 3 of 8 www.unisonic.com.tw QW-R502-170.K ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 12 A Drain Current Continuous ID 12 A Pulsed (Note 2) IDM 48 A Avalanche Energy

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Download a datasheet on Toshiba TB6612FNG Brush motor driver IC. Notes. The Part Number column shows representative part numbers only, which may not be available for sale in the precise form shown. COMPLEMENTARY SILICON HIGH POWER TRANSISTORS STMicroelectronic PREFERRED SALESTYPES DESCRIPTION The TIP35C is a silicon Epitaxial-Base NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and switching applications. The complementary PNP type is TIP36C. Exact specifications should be obtained from the product data sheet. We can supply EUPEC part# T588N14TOC, use the request quote form to request T588N14TOC pirce and lead time. OEMs Electronics - OEMsec.com is an independent stocking distributor of electronic components. C78N12 datasheet, C78N12 pdf, C78N12 data sheet, datasheet, data sheet, pdf Exact specifications should be obtained from the product data sheet. We can supply EUPEC part# T588N14TOC, use the request quote form to request T588N14TOC pirce and lead time. OEMs Electronics - OEMsec.com is an independent stocking distributor of electronic components. C78N12 Datasheet, C78N12 PDF, C78N12 Data sheet, C78N12 manual, C78N12 pdf, C78N12, datenblatt, Electronics C78N12, alldatasheet, free, datasheet, Datasheets, data ...