TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5353 Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications • Excellent switching times: tr = 0.7 µs (max), tf = 0.5 µs (max) • High collectors breakdown voltage: VCEO = 800 V Maximum Ratings (Tc = 25°C) Mar 29, 2012 · Before searching for C9012 transistor datasheet you may have thought that it was a NPN transistor because it has a letter “C” in front. C actually is an European code while 2SC is a Japanese code.

SC1845/ C1845- Replacement for 2SC2546, 2SC1775A • NPN, 120V, 0.05A, 0.5W. • Brand : NEC™ The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. SD1446 - Transistor, ST Micro. The SD1446 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting and is extremely stable and capable of withstanding high VSWR under operating conditions. I removed the oscillator transistor and cut to the chase. Sure enough, while not a dead short in this instance, there was a resistance reading between the case of the transistor and the collector. I bent that transistor’s ground lead over in the same fashion as I have already described and plugged it back in. Mar 29, 2012 · Before searching for C9012 transistor datasheet you may have thought that it was a NPN transistor because it has a letter “C” in front. C actually is an European code while 2SC is a Japanese code. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I72 ®

PNP Darlington transistor in a SOT89 plastic package. NPN complements: BCV29 and BCV49. PINNING PIN DESCRIPTION 1 emitter 2 collector 3 base 321 sym088 TR1 TR2 1 3 2 Fig.1 Simplified outline (SOT89) and symbol. MARKING TYPE NUMBER MARKING CODE BCV28 ED BCV48 EE ORDERING INFORMATION TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION Jun 16, 2017 · C6144 Datasheet - 2SC6144, pdf, pinout, equivalent, replacement, schematic, manual, data, circuit, parts, datasheet. 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor ST 2N2907 and ST 2N2907A are recommended. On special request, these transistors can be

SI-5151S High-side Power Switch ICs [With Diagnostic Function] SI-5151S. Features. q Built-in diagnostic function to detect short and open circuiting of loads and output status signals q Low saturation PNP transistor use q Allows direct driving using

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1013 Color TV Verttical Deflection Output Applications Power Switching Applications • High voltage: VCEO = −160 V • Large continuous collector current capability • Recommended for vertical deflection output & sound output applications for line-operated TV. TRANSISTOR datasheet, TRANSISTOR pdf, TRANSISTOR data sheet, datasheet, data sheet, pdf isc Silicon NPN Power Transistor 2SC5248 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V (BR)CEO= 160V(Min) ·Good Linearity of h FE ·Wide Area of Safe Operation ·Complement to Type 2SA1964 APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V S8050, S9013, S9013W, ZC831, ZC831A, ZC831B.S9013 datasheet, JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO,LTD SOT-23 Plastic-Encapsulate Transistors SOT23 S9013LT1 FEATURES 1.S9013, Кремниевый n-p-n транзистор, Datasheet PDF. s9013 transistor datasheet pdf

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SC1845/ C1845- Replacement for 2SC2546, 2SC1775A • NPN, 120V, 0.05A, 0.5W. • Brand : NEC™ SD1446 - Transistor, ST Micro. The SD1446 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting and is extremely stable and capable of withstanding high VSWR under operating conditions. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.

C6144 transistor datasheet s5151

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MAXIMUM RATINGS TA=250c unless otherwise noted Value 40 25 500 625 150 -55-150 Units mA Symbol VCBO VCEO VEBO Parameter Collector-Base Voltage TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5353 Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications • Excellent switching times: tr = 0.7 µs (max), tf = 0.5 µs (max) • High collectors breakdown voltage: VCEO = 800 V Maximum Ratings (Tc = 25°C) TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5353 Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications • Excellent switching times: tr = 0.7 µs (max), tf = 0.5 µs (max) • High collectors breakdown voltage: VCEO = 800 V Maximum Ratings (Tc = 25°C)